STUDY OF THE DISTRIBUTION PROFILE OF MECHANISMS GLAND WITH IMPLANTATION METHOD

Authors

  • Bakhrom Egamberdievich Egamberdiev Tashkent State Technical University, Tashkent, Uzbekistan
  • Amin Sayfulloyevich Mallaev Karshi State University, Karshi, Uzbekistan
  • Shohruh Aamin o’g’li Sayfulloyev Scientific Research Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, Uzbekistan.

Abstract

In this article on ions with the (110) orientation were implanted into the silicon single crystal. Using the RBS (Rutherford backscattering) method, in combination with channeling, the distribution profiles of the embedded impurity were studied; in addition, the distribution profiles of radiation defects located in the crystal lattice were studied. The simulation results in the TRIM (to’liq nomi kerak) program are compared with the experimental results. It is shown that, at an energy of 4.6 keV / nucleon, a coincidence of the average projective ranges is observed, and when the energy falls to 1.6 keV / nucleon, a difference of 35% is observed. The dose dependence is not taken into account correctly at an energy of 1.6–4.6 keV / nucleon.

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Published

2021-04-14

How to Cite

Bakhrom Egamberdievich Egamberdiev, Amin Sayfulloyevich Mallaev, & Shohruh Aamin o’g’li Sayfulloyev. (2021). STUDY OF THE DISTRIBUTION PROFILE OF MECHANISMS GLAND WITH IMPLANTATION METHOD. JournalNX - A Multidisciplinary Peer Reviewed Journal, 211–218. Retrieved from https://repo.journalnx.com/index.php/nx/article/view/2880

Issue

2021: PCCRE

Section

Articles

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Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.