INFLUENCE OF ULTRASONIC WAVES ON PHOTOELECTRIC CHARACTERISTICS OF SI-PHOTO RECEIVERS
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Abstract
The paper considers the influence of ultrasonic fields on the photoelectric and spectral characteristics of diffusion Si-n-p receivers of electromagnetic radiation. It was found that ultrasonic irradiation increases the lifetime, diffusion length of carriers and, as a consequence, increases the efficiency of collecting carriers on the electrical contacts of Si-n-p-receivers. As a result of these processes, an increase in the value of the short-circuit current is observed, which causes an increase in the no-load voltage and the efficiency of such a diffusion Si-n-p-structure operating in the photo reformation mode.
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How to Cite
Gaibov Abdumalik Gaybullaevich, & Vakhobov Kutbiddin Iloviddinovich. (2021). INFLUENCE OF ULTRASONIC WAVES ON PHOTOELECTRIC CHARACTERISTICS OF SI-PHOTO RECEIVERS. JournalNX - A Multidisciplinary Peer Reviewed Journal, 7(12), 202–206. https://doi.org/10.17605/OSF.IO/T478K